Abstract
GaxIn1−xP/GaAs solar cell (SC) structure was grown on p-type (100)-oriented GaAs substrate by using solid-source molecular beam epitaxy technique. The structural, optical and morphological properties of GaxIn1−xP/GaAs SC structure have been evaluated by means of high resolution X-ray diffraction, photoluminescence, spectroscopic ellipsometry and atomic force microscopy measurements at room temperature. In addition, GaxIn1−xP/GaAs SC structure was fabricated for obtaining the cell’s electrical output parameters. For this purpose, the current–voltage characteristics of GaxIn1−xP/GaAs SC structure were performed and analyzed at the room temperature under both dark and illuminations by using air mass global 1.5 (AM1.5) solar simulator. The device parameters such as the open-circuit voltage, the short-circuit current (I sc ), the fill factor and the energy convertion efficiency (η) of GaxIn1−xP/GaAs SC structure were extracted from the current–voltage characteristics.
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