Abstract
The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5V in reverse polarity with a breakdown limit at more than 100V. The spectral behavior reflects the silicon spectral range with a maximum at about 880nm.
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