Abstract

The novel Inconel buffer films were prepared on copper foils using unbalance direct current (DC) magnetron sputtering. These films were employed as buffer layers for supporting the dense growth of multiwalled carbon nanotubes (MWCNTs). Thermal chemical vapor deposition (CVD) with metal alloys such as stainless steel (SS) type 304 films was considered to synthesize MWCNTs. To understand the effectiveness of these buffer films, the MWCNTs grown on buffer-free layer were carried out as a comparison. The main problem such as the diffusion of catalysts into the oxide layer of metal substrate during the CVD process was solved together with a creation of good electrical contact between substrate and nanotubes. The morphologies, crystallinities, and electrochemical behaviors of MWCNTs grown on Inconel buffer films with 304 SS catalysts revealed the better results for applying in flexible electrochemical applications.

Highlights

  • Since the landmark paper of discoverable multiwalled carbon nanotubes (MWCNTs) was published in 1991 [1]

  • It can be observed that the thicknesses of Inconel buffer layer in the range of 10 ± 5 nm and 75 ± 5 nm represent the poor growth of MWCNTs

  • This work presents the binder-free growth of MWCNTs on Cu foils using 304 stainless steel (SS) catalysts by simple thermal chemical vapor deposition (CVD)

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Summary

Introduction

Since the landmark paper of discoverable multiwalled carbon nanotubes (MWCNTs) was published in 1991 [1]. The MWCNTs have been extensively of interest for various researchers for several decades Because of their excellent properties, they are considered as candidates in nanotechnological works such as sensors, composite materials, capacitors, and many others. The resulting MWCNTs were coated on a conductive substrate. Copper (Cu) is well known as the common conductive materials It has been employed in various works due to its outstanding thermal and electrical conductivity properties. The MWCNTs grown directly on Cu substrates in a large scale production have demonstrated problems due to their low activity with Cu surface [11]. For the dense growth of MWCNTs on a metal substrate, the prevention of catalyst diffusion into the oxide layers of the substrate is required.

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