Abstract
Most advanced microelectronic devices are made by using 193 nm immersion lithography systems, but it is difficult to follow the rapid development of semiconductors due to their approaching physical limits. Extreme ultraviolet (EUV) lithography which uses a shorter wavelength (i.e., 13.5 nm) light source can offer a way to print features under a 20 nm HP. EUV lithography requires photoresists that utilize EUV photons because photons generated by EUV exposure are fewer than photons generated by 193 nm light exposure. In this paper, our recent progress in metal oxide photoresist research will be discussed.
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