Abstract
Most advanced microelectronic devices are made by using 193 nm immersion lithography systems, but it is difficult to follow the rapid development of semiconductors due to their approaching physical limits. Extreme ultraviolet (EUV) lithography which uses a shorter wavelength (i.e., 13.5 nm) light source can offer a way to print features under a 20 nm HP. EUV lithography requires photoresists that utilize EUV photons because photons generated by EUV exposure are fewer than photons generated by 193 nm light exposure. In this paper, our recent progress in metal oxide photoresist research will be discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
