Abstract
We reviewed our recent progress in growth and optical properties of GaN-based quantum dots (QDs). After briefly discussing the impact of GaN-based QDs on the improvement of threshold current characteristics, we show the growth of InGaN/GaN self-assembled QDs with the average diameter of the QDs as small as 8.4 nm and strong photoluminescence emission from the QDs at room temperature. Furthermore, light emission from individual QDs with a sharp luminescence line was detected by single dot spectroscopy. Using these growth results, we fabricated a laser structure with InGaN QDs embedded in the active layer. A clear threshold was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. Finally, growth of InGaN QDs grown by selective growth is also demonstrated. We believe GaN-based QDs are promising for blue light emitting optical devices of the next generation useful for various optoelectronics applications.
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