Abstract
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
Highlights
Antimonide based compound semiconductors (ABCS) mainly refer to the antimonide based binary, ternary and quaternary compound semiconductor materials, consisting of the III-group elements (Ga, In, Al, etc.) and Sb, As and other V-group elements, such as GaSb, InSb, AlGaSb, InAsSb, AlGaAsSb, InGaAsSb and so on
In 2004, Asahi Kasei Electronic (AKE) of Japan which account for 70% of the global market share of Hall sensors announced that its InSb Hall sensor output had reached more than 100 million per month
HEMT and HBT devices and circuits used by millimeter-wave radar and high-frequency digital communications have so far experienced first generation based on GaAs-based materials, second generation based on InP-based materials and is currently to the development of third generation of HEMT and HBT devices and circuits based on antimonide based compound materials with ultra-high speed, ultra-lower power consumption and noise factor
Summary
Antimonide based compound semiconductors (ABCS) mainly refer to the antimonide based binary, ternary and quaternary compound semiconductor materials, consisting of the III-group elements (Ga, In, Al, etc.) and Sb, As and other V-group elements, such as GaSb, InSb, AlGaSb, InAsSb, AlGaAsSb, InGaAsSb and so on. Their crystal lattices are around 6.1Å and they together with the InAs-based materials have been routinely called the “6.1Å III-V family materials”. The unique band structure and excellent physical properties of ABCS based materials provide great freedom and flexibility for band engineering and structural design of materials and create a broad space for development of high-performance microelectronics, opto-electronic devices and integrated circuits. Applications could include active-array space-based radar, satellite communications, ultra-high-speed and ultra-low power integrated circuits, portable mobile devices, gas environmental monitoring, chemical detection, bio-medical diagnosis, drug analysis and other fields [1,2,3,4,5,6,7,8]
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