Abstract
LEDs based on planar InGaN/GaN heterostructures define an important standard for solid-state lighting. However, one drawback is the polarization field of the wurtzite heterostructure impacting both electron–hole overlap and emission energy. Three-dimensional core–shell microrods offer field-free sidewalls, thus improving radiative recombination rates while simultaneously increasing the light-emitting area per substrate size. Despite those promises, microrods have still not replaced planar devices. In this review, we discuss the progress in device processing and analysis of microrod LEDs and emphasize the perspectives related to the 3D device architecture from an applications point of view.
Highlights
InGaN/GaN-based core–shell nano- and microrods for light-emitting diode (LED) applications have been a vivid research topic in recent years [1,2,3]
We discuss the progress in device processing and analysis of microrod LEDs and emphasize the perspectives related to the 3D device architecture from an applications point of view
This review focuses on bottom-up, core–shell InGaN/GaN LEDs
Summary
InGaN/GaN-based core–shell nano- and microrods for light-emitting diode (LED) applications have been a vivid research topic in recent years [1,2,3]. Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs. Materials 2022, 15, 1626. This review focuses on bottom-up, core–shell InGaN/GaN LEDs. First, the properties of the microrods and the associated crystal facets are discussed.
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