Abstract
Due to the limit in computing power arising from the Von Neumann bottleneck, computational devices are being developed that mimic neuro-biological processing in the brain by correlating the device characteristics with the synaptic weight of neurons. This platform combines ionic liquid gating and electrowetting for programmable placement/connectivity of the ionic liquid. In this platform, both short-term potentiation (STP) and long-term potentiation (LTP) are realized via electrostatic and electrochemical doping of the amorphous indium gallium zinc oxide (aIGZO), respectively, and pulsed bias measurements are demonstrated for lower power considerations. While compatible with resistive elements, we demonstrate a platform based on transitive amorphous indium gallium zinc oxide (aIGZO) pixel elements. Using a lithium based ionic liquid, we demonstrate both potentiation (decrease in device resistance) and depression (increase in device resistance), and propose a 2D platform array that would enable a much higher pixel count via Active Matrix electrowetting.
Highlights
Conventional computational devices are designed after Neumann’s model, in which preprogrammed circuits receive and transfer input repeatedly between the memory unit and the logic unit, and subsequently output information based upon the logic unit in the programming
Based on our previous work on ionic liquid (IL)-amorphous indium gallium zinc oxide (aIGZO) electrochemical and electrostatic modulation [4,5,6], we demonstrate a platform via ionic liquid gating of thin film transistors and show that the integration of electrowetting elements can enable the ability to program the position/connectivity of the ionic liquid (IL)
Electrostatic electron doping [4] and electrochemical oxygen extraction [5] has been demonstrated in amorphous indium gallium zinc oxide thin film transistors (TFTs)
Summary
Conventional computational devices are designed after Neumann’s model, in which preprogrammed circuits receive and transfer input repeatedly between the memory unit and the logic unit, and subsequently output information based upon the logic unit in the programming. Electrostatic electron doping [4] and electrochemical oxygen extraction [5] has been demonstrated in amorphous indium gallium zinc oxide (aIGZO) thin film transistors (TFTs). Combining these phenomena in an aIGZO transistor active layer allows us to tune the electrical and chemical properties, creating both short-term potentiation or plasticity and long-term potentiation or plasticity. Long-term potentiation has a greater, more permanent effect on synaptic strength, and is realized here via the electrochemical doping of the aIGZO TFTs. While neuromorphic computing platforms rely on, for instance, crossbars of variable resistive states, we utilize, for convenience, changes in the aIGZO transfer characteristics to demonstrate the programmable platform. Note that resistive elements are integrable with the proposed platform
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