Abstract

This paper presents a new program method for planar EEPROM cells using hot carrier injection (HCI). We found the program conditions of HCI at low control gate voltage (Vcg) stress, constant drain current (Id) and injection times for planar EEPROM cells with threshold voltage (Vth) shift. By using this proposed characteristic, about 65% reduced Vcg, 3∼3.25V is applied for over 1.2V Vth shift and achieved more detailed charge injection control.

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