Abstract
Depth resolution in SIMS profiling of multilayers Co/Cu/Co and Cu/Co/Cu samples has been estimated as a function of bombardment parameters with 3 keV O+2 ions. The best depth resolution is obtained at normal incidence. At glancing incidence it is necessary to flood with oxygen to improve the resolution. Topography development due to sputtering, accountable for worsening of profiles, is reduced by oxygen implantation either directly by O+2 at normal incidence or by flooding at glancing incidence.
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