Production of double-layer epitaxial structures based on the solid solution of the Cd-Hg-Te system using a combination of LPE and MOCVD techniques

A P Kotkov,M N Drozdov,A N Moiseev,N A Smirnova,N D Grishnova,N I Shmatov,I A Denisov,A I Suchkov

doi:10.1134/s002016850812008x

Production of double-layer epitaxial structures based on the solid solution of the Cd-Hg-Te system using a combination of LPE and MOCVD techniques

A P Kotkov, M N Drozdov + Show 6 more

https://doi.org/10.1134/s002016850812008x

Copy DOI

Journal: Inorganic Materials

Publication Date: Dec 1, 2008

Affiliation: Institute of Chemistry of High-Purity Substances them. G.G.Devyatyh, Giredmet (Russia)

#Liquid Phase Epitaxy #Te Layer + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

The technique of growing CdTe and Cdx Hg1 − x Te layers utilizing chemical metalloorganic compound vapor deposition (MOCVD) onto a CdZnTe(111) substrate with a preliminarily deposited Cd y Hg1 − y Te layer using liquid phase epitaxy (LPE) has been developed. No noticeable changes in the electrophysical parameters and composition of the Cd y Hg1 − y Te layer take place under such conditions during MOCVD deposition.

Full Text