Abstract
Abstract Pb1‐x Sn x Te epitaxial layers were successfully grown on PbTe substrates by liquid phase epitaxy (LPE) technique. The compositions and surface morphology of the epitaxial Pb1‐x Sn x Te layers were controlled in the LPE growth, and p‐Pb1‐x Sn x Te/n‐PbTe heterodiodes with a good junction‐perfection factor were made.
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