Abstract
The modal gain spectra of asymmetric multiple quantum-well Ga0.47In0.53As/Ga0.18In0.82As0.4P0.6 heterostructures are theoretically analysed within the framework of the four-band kp method. An efficient procedure for obtaining the broadband and almost flat gain spectrum is proposed. The designs of semiconductor radiation sources with different sets of nonuniformly excited quantum wells producing broadband amplification in spectral ranges from 1.28 to 1.525 μm and from 1.36 to 1.6 μm are calculated.
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