Wide modal gain spectra in the asymmetric multiple-quantum-well heterostructures Ga0.47In0.53As-Ga0.18In0.82As0.4P0.6

Abstract

For asymmetric multiple-quantum-well heterostructures based on Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> As-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.18</sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.82</sub> As <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.4</sub> P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.6</sub> compounds, the detailed theoretical analysis of modal gain spectra is carried out in the framework of the four-band kp-method. Effective procedure of obtaining the wide and practically flat modal gain spectrum is offered. Various designs of the semiconductor sources with different sets of non-uniform excited quantum wells, giving a wide gain spectrum in the 1.28-1.6 mum ranges, are calculated.