Abstract
A new medium current ion implanter, Nissin NH-20SR, has been developed. The NH-20SR provides novel mechanisms such as a spinning platen and variable tilt angle mechanism (VTAM). The spinning platen's maximum rotation speed is 2 rps and it provides both smooth and stepwise motion. VTAM's angle span is from 0° to 60° and changing its tilt angle stepwise during implantation is possible with a minimum step angle of 1°. These mechanisms have made it possible to implant into trench sidewalls, to suppress channeling effects, and to improve dose uniformity as well as asymmetrical electric characteristics of MOS transistors.
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