Abstract
We have synthesized boron-doped single wall carbon nanotubes in a high vacuum chemical vapor deposition (CVD) system using a new boron precursor. Transmission electron microscopy was used in order to confirm the presence of single wall carbon nanotubes and field emission scanning electron microscopy to allow a qualitative characterization of the produced tubes. To estimate the doping level, we compared the Raman spectra with pure single wall carbon nanotubes and we found an upshifted G band as an evidence of doping. X-ray photoelectron spectroscopy analysis and ab initio electronic structure calculations reveals the presence of substitutional boron atoms incorporated on the tubes. We have also developed a simple method to determine quantitatively in which temperature range the carbon nanotubes are produced more efficiently by high vacuum CVD.
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