Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devices

Abstract

In this paper, we investigate the threshold voltage fluctuation for nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) and silicon-on-insulator (SOI) devices. The threshold voltage fluctuation comes from random dopant and short channel effects. The random-dopant-induced fluctuation is due to the random nature of ion implantation. The gate-length deviation and the line-edge roughness are mainly resulted from the short-channel effect. For the SOI devices, we should also consider the body thickness variation. In our investigation, the metal gate with high- κ material MOSFET is a good choice to reduce fluctuation of threshold voltage when comparing to the poly gate MOSFET and thin-body SOI devices.