Abstract
Lead zirconate titanate Pb(Zr 0.53Ti 0.47)O 3 (PZT) thin films grown on Pt(1 1 1)/Ti/SiO 2/Si(1 0 0) substrates by a simple sol–gel process use various thermally decompose temperatures from 320 to 400 °C. Then PZT films were annealed at various temperatures from 550 to 600 °C in oxygen atmosphere by a rapid thermal annealing process, and highly (1 1 1)-oriented PZT thin films have been obtained. The microstructure and surface morphologies, and root mean square (RMS) roughness of the thin films were studied by X-ray diffraction and atomic force microscopy (AFM). AFM images shown that the higher (1 1 1) orientation present in the PZT thin films, the smaller grain size, and the lower RMS roughness. PZT films on Pt/Ti/SiO 2/Si substrates were initially heated at 400 and 320 °C, then annealed at 550 °C, the remanent polarization ( P r) and coercive electric field ( E c) were 16.1 μC/cm 2 and 105 kV/cm, 32.2 μC/cm 2 and 79.9 kV/cm; at 100 kHz, the dielectric constant and dissipation factor were 331 and 0.045, 539 and 0.066, respectively. The highly (1 1 1) oriented PZT films, have smooth surface, good ferroelectric and dielectric properties.
Published Version
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