Abstract
Processing considerations of thick film devices with multi-layered resistors: Nobuyuki Sugishita, Akira Ikegami and Tsuneo Endo Electrocomponent Sci. Technol.9, 59 (1981)
Highlights
It has been necessary to miniaturize the electronic circuits required for such small spaces as those in calculators, portable radios and automobiles
1) Processes for fabricating thick film multilayer devices with two layer resistors formed on and under dielectric layers have been developed for a high density thick film hybrid IC
2) The resistive values of resistors under dielectric are changed in the succeeding firing processes, and these resistivity changes are influenced by the geometry of the resistors
Summary
It has been necessary to miniaturize the electronic circuits required for such small spaces as those in calculators, portable radios and automobiles. For this purpose, thick film multilayer technology has been applied. The resistance drift under high temperature storage and TCR varied greatly from that of resistors printed on bare alumina, but some good compatible combinations of materials have been developed recently. The objective of this research is to develop processes for forming resistors on dielectric layers and under them, in order to realize the further miniaturization of thick film hybrid circuits. This paper will present the resistivity, TCR and stability of resistors formed on and under dielectric layers, using commercial materials
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