Abstract
The use of gold metallization in multichip modules (MCMs) has been investigated for the purpose of achieving simplified processing and high reliability. A process has been developed for producing multilayered, gold metallization thin film MCM (MCM-D) structures which reduces the number of processing steps compared to copper metallization. Multilayered gold-polymer and gold-SiO/sub 2/ test devices have been fabricated to evaluate the electrical and mechanical properties of the structures. The adhesion of a variety of dielectrics has been achieved by blanket coverage of the noble metal with a single step adhesion layer. The processing, performance, adhesion layer, and cost of gold MCM-D structures on silicon substrates have been analyzed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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