Process variation and analysis of FinFET for low-power applications

Abstract

In today’s microelectronics, FinFET played a leading role to reduce the device dimension at the nanometer scale. The ultra-thin fin on the FinFET device leads to suppression in short channel effect and leakage current that can make a different edge on the performance of the VLSI circuit. In this article, a comprehensive simulation and compact model of 14nm N-type FinFET presented. N-Type FinFET is simulated and analyzed the performance on the different parameters like power dissipation and on-off current ratio (Ion/Ioff) concerning the different oxide material. Further, we analyzed the proposed device performance through the process variation by varying the parameter temperature from 200K to 350K and oxide thickness from 1 nm to 3nm. The high current ratio value of 1010 observed in high-k oxide material in comparison to low-K oxide material that enhance the switching speed of the device in the proposed design along with analyzed the bandgap also. The power dissipation of the proposed design improved upto 38% in comparison to a low-k oxide material.