Abstract
(PbLa)(Zr,Ti)O3 (PLZT) thin films were fabricated by RF magnetron sputtering. Aiming at process development for FRAM® production, PLZT films were deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rate was realized at relatively low sputtering power by utilizing a high-density PLZT target. Precise compositional control was achieved by controlling sputtering condition. A non-stop 1000-wafer deposition was performed showing high process stability in terms of both deposition rate and ferroelectric properties.
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