Abstract
Process parameter selection is a crucial step for SiNx:H film preparation process by Plasma Enhanced Chemical Vapor Deposition (PECVD) during the fabrication of silicon solar cells. Practically, process parameter selection lacks effective decision-making method and mostly relies on full-experiment-based judgments. Motivated by which, a holistic process parameter selection approach is proposed and established in this paper. The relationships between process parameters and every single quality evaluating index of SiNx:H films are figured out by the single factor experiment. Then the optimal process parameters are selected by the comprehensive scoring method. Meanwhile, a new mathematical model is employed to boost the optimal outputs of the orthogonal experiments to obtain the priority of the four input factors as: Flow-Rate Ratio of NH3/SiH4, Working Pressure, Substrate Temperature and Total Gas Flow Rate. Subsequently, the brief analysis is given to these input factors and quality evaluating indices. Finally, the effectiveness and efficiency of the proposed approach is elaborated both in technology and on cost reduction of mass production by a real case example in a photovoltaic manufacturer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
