Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

Abstract

Although similar deposition rate (2.0nm/s) and defect absorption (α0.8eV =2.5cm-1) for intrinsic µc-Si:H films can be obtained at different total gas flow rate, the solar cell performance, which consists of the above intrinsic µc-Si:H as absorb layers, was obviously different. From the results of quantum efficiency (QE), dark J-V characteristic and Raman spectra, it was found that the amorphous silicon incubation layer is the main reason for the difference of the two solar cells. Increased the total gas flow rate can reduce the thickness of the amorphous silicon incubation layer, which can enhanced the QE response in the long wavelength and increase the short circuit current. These results demonstrate that the amorphous silicon incubation layer was a key factor for the fabrication of high efficiency microcrystalline silicon solar cell with high growth rate.