Process Parameter Control for BEOL TiN Hard Mask Etch-Back

Abstract

In this paper we demonstrate an effective process control mechanism to significantly improve on the process performance of a BEOL post-etch cleaning process with an integrated partial or complete removal of the TiN HM (hard mask) layer by so called formulated chemistries on a single wafer processing tool. The novel process control mechanism enables a 50% reduction in chemical consumption while achieving an at least equivalent TiN etch uniformity.