Process Induced Recombination Centres in Neutron Transmutation Doped Silicon and their Influence on High-Voltage Direct-Current Thyristors

Abstract

The tight control of doping level and uniformity offered by NTD Silicon has permitted the more optimised design of power semiconductor devices. In particular large diameter high resistivity NTD Silicon has permitted the design of higher voltage and higher current thyristors for High-Voltage Direct-Current applications. In this paper we report on a study of the effects of lifetime degradation in NTD Silicon during device processing and its influence on forward-voltage drop. It is found that the effects of lifetime degradation in the p-base region of the thyristor are greater than in the wide undiffused n-base region.