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Abstract
The process-induced defects in nitrogen doped CZ silicon (NCZ-Si) are investigated during diode processes. It was found that in the phosphorous predeposition (1230°C for 2 h), stacking faults and dislocations were formed in NCZ-Si, but in the common CZ silicon (ACZ-Si) only dislocations were observed. In boron diffusion process (1260°C for 30 h), the interstitial oxygen (O i) concentration in NCZ-Si specimens fell to the corresponding solubility and all supersaturated O i was precipitated. On the contrary, only slight oxygen precipitates were generated in ACZ-Si wafers. Correlated to oxygen precipitates, more dislocations were produced in the high resistance active region in NCZ-Si specimens in comparison with ACZ-Si. It is concluded that nitrogen enhances oxygen precipitation during diode processes. In phosphorous predeposition process, these oxygen precipitates in NCZ-Si resulted in not only dislocations, but also stacking faults.
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