Abstract
A low temperature fabrication process for gated field emitter arrays is developed with etched amorphous silicon microtips on glass substrates. Reactive ion etching using a SF6/O2 plasma is employed to sharpen microtips without any thermal oxidation or wet etching technique. Field emitter arrays with a triode structure are successively fabricated by utilizing plasma enhanced chemical vapor deposition and electron beam evaporation for a SiO2 gate oxide and a niobium gate, respectively.
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