Abstract
A self-aligned fabrication process for small emitter contact area (2×4 μm2) GaN/AlGaN heterojunction bipolar transistor is described. The process features dielectric-spacer sidewalls, low damage dry etching, and selected-area regrowth of GaAs(C) on the base contact. The junction current–voltage (I–V) characteristics were evaluated at various stages of the process sequence and provided an excellent diagnostic for monitoring the effect of plasma processes such as chemical vapor deposition or etching. A comparison is given with large emitter-area (1.96×103 μm2) devices fabricated on the same material. The small-area devices are attractive for microwave power switching applications provided a high-yield process can be developed.
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