Process and device simulation based on atomistic and quantum mechanical approach in the regime of sub-50 nm gate length

Abstract

In this paper, we report simulation methods based on atomistic approach for sub-50 nm gate length. Molecular dynamics (MD) is implemented for the ion implantation process to form ultra-shallow junctions. And then, the diffusion process is simulated by using kinetic Monte Carlo (KMC) with the damages and dopants distribution from ion implantation in MD. A device simulation is performed by using profiles from the results of KMC. As an exemplary case, we demonstrate FinFET of 20nm physical gate length.