Abstract
An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barrier height (SBH) modification, is extracted from the field dependence of the barrier heights. A clear difference between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a p+- n junction while arsenic DS forms a “Shannon” junction with a fully depleted 1.5-nm doping depth in front of the silicide.
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