Abstract
High performance Schottky barrier MOSFETs require metallic source/drain contacts with very low Schottky barrier heights. This investigation focuses on barrier lowering via silicidation induced dopant segregation at the NiSi/Si interface with particular emphasis on the influence of dopant activation prior to Ni-silicidation. Diodes with activated dopants reveal significantly lower Schottky barrier heights than diodes made without dopant activation. The electrical measurements in combination with secondary-ion mass spectroscopy allowed the determination of the effective Schottky barrier heights resulting in minimum barrier heights of around 0.1 eV. Moreover, we present an n-type SB-MOSFET with dopant segregation on thin body SOI which shows an intrinsic performance comparable to a conventional MOSFET.
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