Abstract
A novel device for spin-current detection in semiconductors, based on the extraordinary Hall effect, is proposed. When a spin current is injected into a nonmagnetic semiconductor, it is found that a transverse electric field, or Hall voltage, is generated. The Hall voltage is proportional to the spin current in the nonmagnetic semiconductor. The proposed device can be used as a tool to investigate the fundamental spin-diffusion length and spin-dependent Hall coefficients in a semiconductor.
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