Probing highly deep levels in solid C70 with isothermal capacitance transience-time spectroscopy

Abstract

A technique, referred to as the isothermal capacitance transience-time spectroscopy, has been developed to probe the deep levels at insulator/semiconductor interfaces or in semiconductor materials with fairly wide band gaps held at moderately elevated temperatures. The highly deep levels in the solid C70/p-GaAs heterojunction were studied with this technique. Two discrete hole traps, H1 and H2, were found to exist in the solid C70 layer at the positions of Ev+0.856 eV and Ev+1.037 eV, respectively.