Abstract
A lighted capacitance–voltage (LCV) method for spatially profiling defect levels in wide band gap, highly compensated materials is presented. Combined with deep level optical spectroscopy, the optical nature of the LCV profiling technique enables the quantitative study of lower bounds of concentrations for multiple deep and midgap levels. Unlike many other approaches to measuring large deep level concentrations in resistive semiconductors, this LCV method requires no constant-capacitance feedback circuit and is applicable to wide band gap materials such as GaN and SiC. To demonstrate this technique, deep levels at Ec−3.0 and 3.28eV are spatially profiled in heavily compensated GaN:C:Si Schottky diodes. Comparison of the profiles with conventional constant-capacitance and constant-voltage approaches for calculating deep level concentrations shows good agreement between the methods and demonstrates the validity of the technique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
