Abstract

Electrical low frequency noise (LFN) measurements are utilized in this work, in order to identify parasitic low voltage transport mechanisms in diced aluminum back surface field (Al-BSF) photovoltaic (PV) cells, which cannot be identified by I–V characterization. A detailed method of LFN analysis is proposed, taking into account the co-existence of various transport mechanisms, that typically occur in parallel in such devices. A precise examination of the 1/f noise level dependency with both current and voltage, combined with static I–V characterizations at various temperatures, enabled the identification of two flicker noise sources appearing at different current regions: one attributed to local linear shunt mechanisms and a second one to a fluctuation in a nonlinear parasitic conductivity localized at the samples’ edges. The latter source exhibits noise signatures resembling either tunneling or Poole-Frenkel transport, while excluding Shockley-Read-Hall recombination processes. This hypothesis was further verified by measurements of thermal activation energies typical of tunnel and Poole-Frenkel conduction mechanisms.

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