Abstract
By using time-resolved electric-field-induced optical second-harmonic generation measurement, we studied carrier motion in pentacene field-effect transistors (FETs) with poly-4-vinylphenol (PVP) and with polyimide (PI) gate-insulator whose active layers were depleted by pre-biasing. Upon removal of the pre-biasing, channel formation proceeded as a two-step process in FETs with PVP gate-insulator and a conduction channel was formed eventually. On the other hand, no conduction channel was formed in FETs with PI gate-insulator but two-step carrier propagation was observed in a similar way. Results showed that a local electric field induced on the gate-insulator surface gives a significant effect on the carrier injection and the following carrier transport.
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