Analysis of pentacene field-effect transistor with contact resistance as an element of a Maxwell–Wagner effect system

Abstract

In organic field-effect transistors (OFETs), the carrier injection from the source and drain electrodes depends on the contact resistance. Results of this study show, based on a dielectric physics analysis of a pentacene OFET as a Maxwell–Wagner (MW) effect element with the contact resistance, that the contact resistance leads to an increase in the time required for charge accumulation at the interface. Considering that background, the carrier injection, transport, and accumulation mechanisms were investigated. Capacitance frequency and time-resolved microscopic optical second harmonic generation (SHG) measurements were discussed, taking into account the usefulness of the MW model analysis, and to clarify the effect of contact resistance. Our experimental results corroborate our analysis, based on the carrier mechanism in OFETs, was supported by optical SHG measurements.