Abstract

Because of the large cost associated with inspection and repair of sub‐half‐micrometer 1:1 x‐ray masks, it is worthwhile to determine precisely the defect requirements. The printed resist image of x‐ray mask defects is simulated with the simulator xmas (X‐ray lithography Modelling And Simulation) for different mask defect sizes. The printed defect size increases with increasing mask defect size. If it reaches (1)/(10) of the smallest printed linewidth, the corresponding mask defect size is regarded as critical. Mask defects equal to or larger than the critical size must be repaired. The critical sizes of different types of x‐ray mask defects are evaluated giving the desired defect requirements. The simulations are confirmed by a comparison between a physical and a simulated print of a designed mask defect. The investigation is confined to the use of a synchrotron as the x‐ray source.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.