Abstract
We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ,and their tear-off stress is 27.6 kPa.
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