Abstract
We have developed the pressure-controlled solution growth (PC-SG) method and indicated the validity of this method for the growth of GaN single crystals. We have investigated the effect of the supersaturation of nitrogen atoms on the size of a GaN single crystal and its morphology. GaN single crystals with a surface area of about 120 mm2 and/or with good morphology were obtained at a rate of increase of nitrogen pressure less than 49 MPa/h. Structural and photoluminescence properties of GaN single crystals were examined and determined that these crystals with good morphology had good crystallinity. Furthermore, we have introduced a new high-pressure furnace and developed the multi-crucible system. The GaN single crystal with a surface area of 300 mm2 was obtained by natural nucleation. The GaN crystal with 47 mm diameter, whose normal axis was the (0001) plane, could be grown on a sapphire substrate.
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