Abstract
Molecular dynamic simulation was employed to study the stable state of He–vacancy (He–V) complex in bcc iron. The pressure of He–V complex was calculated using the concept of atomic-level stress. In the case of no initial vacancies introduced in the simulation box, self-interstitial atoms (SIAs) are emitted by the small He cluster. As the number of the He cluster is above a critical value, interstitial-type dislocation loops (I-loop) will be generated. After the interstitial-type defects (SIA or I-loop) were created, it is found that the ratio of He atoms to athermal vacancies keeps nearly constant in the He–V complex.
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