Abstract
We report a pixel circuit with a piezoresistive sensor using amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) backplane for large-area pressure mapping. The proposed pixel circuit consists of TFTs, piezoresistive sensor, and a capacitor. The pressure sensor shows a large resistance change between 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> and 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ohm. The RC charging time to the capacitance can be modulated by pressure-dependent resistance within pre-charging period for sensing. The pressure sensor array has a resolution of 0.625 mm, rising and falling times of 40 μs and 10 μs, respectively. The output voltage is between 0.15 V (zero pressure) and 1 V (2 kPa) without an external amplifier. We demonstrate the pressure mapping over 32 x 32 active-matrix pressure sensor array.
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