Abstract
The effect of pressure on amorphous Ge was probed by Raman spectroscopy combined with molecular-dynamics simulations. A large jump occurs in the principal peak position due to nearest-neighbor Ge-Ge vibrations at 11--12 GPa and 7--5.5 GPa, respectively, during increasing/decreasing pressure due to a polyamorphic transition occurring between the low-density amorphous semiconductor and a metallic high-density polyamorph (HDA). We measured the superconducting transition temperature $({T}_{c})$ using magnetic susceptibility measurements in the diamond anvil cell and determined that ${T}_{c}$ for the high-density HDA polyamorph was higher than that for the $\ensuremath{\beta}\text{-Sn}$ structured Ge-II crystalline phase.
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