Abstract
It is a well-established experimental fact that exciton-phonon coupling is very efficient in ZnO. The intensities of the phonon-replicas in ZnO/(ZnMg)O quantum structures strongly depend on the internal electric field. We performed high-pressure measurements on the single ZnO/(ZnMg)O quantum well. We observed a strong increase of the intensity of the phonon-replicas relative to the zero phonon line. In our opinion this effect is related to pressure induced increase of the strain in quantum structure. As a consequence, an increase of the piezoelectric component of the electric field is observed which leads to an increase of the intensity of the phonon-replicas.
Highlights
It is a well-established experimental fact that exciton-phonon coupling is very efficient in ZnO
If wurtzite quantum structures are grown along c crystallographic direction they exhibit the quantum-confined Stark effect (QCSE) due to built-in electric fields, related to spontaneous and piezoelectric polarizations
The growth on the a-plane sapphire is this kind of epitaxy, when the symmetry of the grown layers does not follow the symmetry of the substrate and the epitaxy is referred to as “ uniaxial locked epitaxy“
Summary
It is a well-established experimental fact that exciton-phonon coupling is very efficient in ZnO. The intensities of the phonon-replicas in ZnO/(ZnMg)O quantum structures strongly depend on the internal electric field.
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