Abstract
Role of electric and magnetic field on the localization of excitons in modulation-doped InGaAs/GaAs quantum well (QW) is investigated by temperature and magnetic field dependent photoluminescence (PL) spectroscopy. In this sample, an asymmetric doping profile on the one side of QW results in a strong built-in electric field along the growth direction of the structure. The carriers in QW drift according to this electric field, and experience the atomic irregularities at the InGaAs/GaAs interfaces. Under this condition, impact of thermal energy on the localization of charge carriers are probed by the temperature dependent PL measurements. On the contrary, a magnetic field along the growth direction confines the in-plane motion of charge carriers, which enhances the radiative recombination efficiency of excitons. It is found that a magnetic field with different orientations, either perpendicular or parallel to the QW plane, can be used to compensate the internal electric field assisted localization of excitons at the hetero-junctions. Moreover, a feeble Landau- diamagnetic shift of excitons under a parallel magnetic field configuration is explained by the coupling of internal electric field with the magnetic perturbation on the carriers in QW.
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