Abstract
Atomic nitrogen recombination probabilities (γN) are presented for different materials. They were obtained under late afterglow conditions through a comparison between local measurements of the nitrogen atom density with two-photon absorption laser-induced fluorescence (TALIF) and calculations of atomic concentration profiles in the vicinity of substrates. A comparison is also made between a spatially resolved technique (TALIF) and a non-spatially resolved one (based on optical emission spectroscopy) for the measurement of N-atom concentration. For each of the studied materials, an inverse pressure dependence of γN was observed, while the obtained data were found to be in good agreement with previously published values, derived from surface temperature measurements.
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