Pressure dependence of the diamagnetic susceptibility of shallow donors in silicon

Abstract

A theory of the diamagnetic susceptibility (χ dia) of a shallow donor in Si is given incorporating the many valley structure of the conduction band minimum. This theory is then used for the computation of χ dia for various uniaxial stresses applied along [100], [110] and [111] directions. The effect of the uniaxial stress on the donor states is considered by following the Valley Repopulation Model of Wilson and Feher. It is found that the directional dependence is negligible and diamagnetism increases with the value of pressure.