Determination of the deformation potential of shallow donors in silicon

Abstract

The stress dependence of the energy of the ground state of group V impurities (P, Sb) in silicon was investigated by measurement of the Hall effect in a wide range of pressures. A conclusion was reached that the deformation potential of the lowest impurity state of shallow donors (Ξ ∗ u ) in silicon differs from the deformation potential of the conduction band (Ξ u ), the value of this difference being dependent on the type of the impurity. According to our data, the most probable values for ( Ξ u  Ξ ∗ u ) are 0.12 eV for phosphorous-doped silicon and 0.06 eV for antimony-doped silicon.