Abstract
Abstract Polycrystalline diamond films with surface morphologies of {100} and {111} facets were synthesized using hot filament assisted chemical vapor deposition (HFCVD) from a methane-hydrogen gas mixture. It is found that under the HFCVD conditions, metastable equilibrated growth of diamond crystal can be controlled by changing parameters. In the present case, the manner of the growth is obviously dependent upon ambient pressure, i.e. at higher pressure, diamond {100} is the favorable growth surface, whereas {111} is the favorable growth surface at lower pressure. This oriented growth of CVD diamond is discussed in terms of as-grown surface free energy (AGSFE) which is a function of surface structure and surface reactions. The results illuminate the development of oriented growth of HFCVD diamond by controlling growth conditions.
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